Profile Details Product Sheet (PDF)

Specifications

• 50, 75, 100 mm

• MOCVD production

• Laser applications

Features and performance

• Laser emission ranging from 740 nm to 980 nm

• QW Active Layer Materials

- GaAs

- AlGaAs

- InGaAs

- InAlGaAs

- GaAsP

- InGaAsP

• Carbon-doped GaAs up to 1E20

• Zinc-doped GaAs up to 1E20

• Carrier concentration verified via both Hall and Polaron

L-I-V curve for an 808 nm AlGaAs/GaAs laser bar

A plot of the output power versus drive current and voltage from an 808 nm AIGaAs/GaAs edge-emitter laser bar. The laser bar has 46 emitters with a cavity length of 1mm and a stripe size of 80µm. The plot shows an excellent slope efficiency of 1.1 W/A with a threshold of 7.5A.

PL map for a three-inch 808 nm high-power edge-emitting laser

A photoluminescence map for a three-inch 808 nm laser. The map shows a standard deviation of less than 1 nm.


The above graph shows a typical PL spectrum with a full-width at half-maximum of 15 nm.

Reliability for an 808 nm high-power laser

A lifetime plot for an 808 nm AIGaAs/GaAs edge-emitter laser bar with 46 emitters, a cavity length of 1 mm and an 80 µm stripe width. This device was tested under 28A of drive current at 25°C and shows a lifetime greater than 1,200 hours.

EpiWorks characterization of GaAs edge-emitter laser wafers
Parameter		Measurement technique		Standard tolerance of specified value
QW PL Wavelength		PL Mapping		±3nm
Composition		X-Ray		±3%
Thickness		Alpha-step and PL fringes		±10%
Doping		Polaron and Hall		±30%
Defect density (diameter > 2 µm )		Surfscan		<10 cm-2

Download product sheet (PDF—79K)