Profile Details Product Sheet (PDF)

Specifications

• 50, 75, 100 mm

• InP/InGaAs/InGaAsP

• Photodetector devices

• MOCVD production

• Telecommunications applications

Features and performance

• Typical i-layer background concentration <5e14, measured by polaron

• Quick-lot diode fab and characterization available

• Low dark current

• Typical leakage currents less than 1nA at –5 volts

• InGaAsP capability for advanced structures

I-V curve for P-I-N diode

An I-V curve for a diode with a 2µm i-layer and a 90µm diameter. Typical devices show leakage currents of less than 1 nA at a 5V reverse bias.

PL map of 100 mm InGaAsP wafer

A PL map of a 100mm InGaAsP wafer with a 1.0µm peak wavelength. Typical uniformity numbers ar eless than 0.5%.

EpiWorks characterization of InGaAs photodetector wafers
Parameter		Measurement technique		Standard tolerance of specified value
Carrier concentration		Polaron profiler, SIMS		±30% gauge capability
Lattice mismatch		X-ray diffraction		±1000 ppm
Layer thickness		AlphaStep, SIMS		±10%
Defect density		Tencor Surfscan		<10 cm-2
Leakage current (90 µm diameter)		Diode I-V measurements		±50%

Download product sheet (PDF—31K)