Overview
EpiDetector
EpiHBT InGaP/GaAs
EpiHBT InP
EpiLaser AlGaAs/GaAs Edge-Emitter
Profile Details Product Sheet (PDF)
- Specifications
- • 100 and 150 mm
- • InGaP/GaAs
- • MOCVD production
- • Power amplifier and digital applications
- Features and performance
- • InGaP emitter
- • Carbon doped up to 4E19 cm-3
- • Full-wafer fab enables
- • high-level quality assurance
- • rapid improvement of HBT processes
- • high uniformity
- • Quick-lot data for improved yield and quality
100mm InGaP HBT base TLM uniformity
Normalized 100mm base TLM uniformity (s/µ) of less than 2%.
Gummel plot for InGaP/GaAs HBT
InGaP/GaAs HBT with a 75 x 75 µm2 emitter. The current gain is about 130, and the gain-to-base sheet ratio is about 0.55.
Resistivity map of 150 mm InGaP HBT
150 mm InGaP HBT with typical uniformity of less than 2%.
| EpiWorks characterization of InGaP/GaAs HBT wafers |
| Parameter |
 |
Measurement technique |
|
Standard tolerance of specified value |
| Sheet resistance |
|
Contactless resistivity |
|
±5% |
| Layer thickness |
|
Profilometer and/or white light reflectance |
|
±10% |
| Carrier concentration |
|
Hall measurement |
|
±10% |
| Large-area device date (Beta, Rsb, Rese, Vbe, BVceo, BVebo, BVcbo, nc, Nb |
|
Full wafer, large-area device process/test |
|
- |
| Defect density (0.3 to 25 µm2) |
|
Surfscan |
|
<10 cm-2 |
Download product sheet (PDF—40K)
| |
