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EpiHBT™ InP Wafers

InP HBT Wafers: Next-generation materials and technology for high-speed, low-power applications.

Designed to meet the demands of tomorrow's high-speed 3G wireless and OC-768 networking technologies, Epiworks' InP heterojunction bipolar transistors (HBT) combine high-frequency performance with ultra-low power consumption. Manufacturer of the world's first 100 mm carbon-doped InP HBTs, EpiWorks continues to innovate by delivering advanced DHBTs and graded-base HBTs, in addition to our leading SHBTs.