Profile Details Product Sheet (PDF)

Specifications

• 50, 75, and 100 mm mm

• Carbon-doped InGaAs

• MOCVD production

• Digital and power applications

Features and performance

• InP emitter

• Carbon doping for high reliability

• SHBT and DHBT

• InGaAsP capability for advanced DHBT structures

• Graded-base for higher gain and speed performance

• Quick-lot HBT fab and characterization available for maximum yield and quality

Figure of merit extrapolation

High-frequency performance for a small-area HBT with a 2500 Angstrom collector and a 600 Angstrom base, showing ft > 200 GHz and fmax > 160 GHz.

Gummel plot for InP/InGaAs SHBT

InP/InGaAs SHBT with a 60 x 60 µm2 emitter fabricated at EpiWorks on a 100 mm substrate.

Resistivity map for a 100 mm carbon-doped InGaAs layer

Carbon-doped InGaAs layer with typical uniformity of less than 3%.

EpiWorks characterization of InP HBT wafers
Parameter		Measurement technique		Standard tolerance of specified value
Sheet resistance		Contactless resistivity		±5%
Layer thickness		Profilometer, X-ray diffraction		±10%
Carrier concentration		Hall measurement		±10%
Large-area device date (Beta, Rsb, Rese, Vbe, BVceo, BVebo, BVcbo, nc, Nb		Full wafer, large-area device process/test		-
Defect density (0.5 to 25 µm2)		Surfscan		<50 cm-2

Download product sheet (PDF—60K)