CHAMPAIGN-URBANA, ILLINOIS – April 22, 2005 – Today, Illinois based EpiWorks, Inc., a leading developer and manufacturer of compound semiconductor epitaxial wafers, announced record speed achieved from its GaAsSb/InP heterojunction bipolar transistor (HBT) wafers.
EpiWorks, which formally introduced its GaAsSb/InP HBT capability in June 2003, has provided wafers to various researchers in the U.S. including the University of Illinois at Urbana-Champaign (UIUC), and Rockwell Scientific located in Thousand Oaks, CA.
Researchers at UIUC are investigating the material for use in their on going to efforts to scale HBT technology for high-speed, low-power operation. Partial funding for the device layer growth was provided to Professor Feng’s research group by the Vice Chancellor of Research’s Office at the University of Illinois.
“We have now demonstrated world-record speed for a GaAsSb/InP HBT with an fT, of 358 GHz. While this is the highest speed demonstrated to date for GaAsSb/InP HBTs, it is not as fast as traditional InGaAs-base devices that we have recently demonstrated operating up to 600 GHz. However, because of the type II band-alignment, GaAsSb/InP HBTs could theoretically have the highest ‘speed-breakdown product’ of any InP-based technology. We are excited by this result, especially because the trade-off between breakdown voltage and speed is increasingly important as we continue to scale the critical device dimensions below 50 nm,” said Professor Milton Feng, the lead researcher at UIUC. “By developing state-of-the-art Sb-based processes, EpiWorks has provided an important technology that enables the realization of practical terahertz transistors.”
EpiWorks also supplied wafers to industrial partners, including Rockwell Scientific. Using their own design, researchers at Rockwell demonstrated dc devices with a current gain of 20 and a breakdown voltage of approximately 5V for a 3000A thick collector, further validating EpiWorks’ new GaAsSb/InP process.
Substrates for the project were provided by InPact, and the Sb-source material was provided by Epichem.
“By working together with our suppliers, and working closely with our customers, EpiWorks has developed an industry leading C-doped GaAsSb HBT process,” said Quesnell Hartmann, President of EpiWorks, Inc. “Developing a new technology is a team effort, requiring our engineers to work closely with our suppliers, and our customers’ engineers. We are proud of the results of our work, and the contributions made by each participant. Our goal now is to move toward commercialization of this new technology.”
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EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in optical components, wireless devices and high-speed communication systems. The company’s products provide these applications additional performance, such as greater bandwidth, higher power efficiency and better reliability. EpiWorks’ business model includes high-level customer interaction and co-development to rapidly advanced its customers’ technology capability and product performance.
The University of Illinois at Urbana-Champaign is well known for its research and development of III-V materials and devices.
Rockwell Scientific Company LLC, based in Thousand Oaks, CA, is an independent, privately owned high-technology enterprise with unique technical strengths in imaging sensors, electronics, optics, materials, and information science. Its range of activities includes performing research services for the U.S. government and private sector companies, as well as the manufacturing and sale of high-value products and licensing the technologies related to its R&D efforts.
InPACT is the leading Western producer of Indium Phosphide substrates covering all dopants and diameters (2 to 4inch). Thanks to its TOF SIMS tool, the company keeps its technical edge in terms of surface preparation, its Epiclean recipe guaranteeing of clean interface and low charge accumulation. So we are happy to contribute with Epiworks to high performance HBT at UIUC and Rockwell, two more device processing groups using InPACT. Please click on www.inpactsemicon.com to know more.
Founded in 1983, Epichem manufactures a range of high purity specialty chemicals for the electronics, optoelectronics, glass and pharmaceutical industries. With global manufacturing and distribution facilities, for a full range of volatile precursors for the compound semiconductor industry, Epichem exports throughout Europe, the US, and the rapidly growing markets in Japan and Southeast Asia. Epichem’s strong R&D background ensures that the products offered FULFIL current and future customer demands. Our liquid bulk delivery system, EpiFill, and our continuous liquid level sensor, EpiSensor, make Epichem the leader in innovation.