CHAMPAIGN-URBANA, ILLINOIS – May 29, 2003 – Today, Illinois based EpiWorks, Inc., a leading developer and manufacturer of compound semiconductor epitaxial wafers announced the availability of a new capability to produce high-performance 1550 nm InP laser wafers.

“1550nm InP lasers are integral to high-tech applications such as datacomm for metro and fiber-optic communications,” said David Ahmari, Executive Vice President at EpiWorks. “As part of our on-going efforts to expand our InP edge-emitter product line, EpiWorks is pleased to announce a production qualified, leading epitaxial material capability for 1550 nm lasers.”

Typical production data from EpiWorks’ InAlGaAs/InP 1550 nm laser customers include a transparency current density of 330 A/cm2, a threshold current density of 500 A/cm2 (for a 500 μm cavity), with an internal quantum efficiency of 73%. Lasers utilizing EpiWorks wafers also demonstrate excellent uniformity across the wafer for both threshold current and laser wavelength emission.

“EpiWorks has been working very closely with our customers to ensure that we are providing the highest quality InAlGaAs/InP 1550 nm laser wafers so that they can achieve leading performance.” said Quesnell Hartmann, President at EpiWorks. “We believe that our ability to interact at a high-level with our customers will continue to enable further, rapid advancements in our materials technology.”

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EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in optical components and high-speed communication systems. The company’s products provide these applications additional performance, such as greater bandwidth, higher power efficiency and better reliability. EpiWorks’ business model includes high-level customer interaction and co-development to rapidly advanced its customers’ technology capability and product performance.