CHAMPAIGN-URBANA, ILLINOIS — January 28, 2003 — Today, Illinois based EpiWorks, Inc., a leading developer and manufacturer of compound semiconductor epitaxial wafers announced the availability of a new capability to produce high-performance 808nm GaAs laser wafers.
“808nm GaAs lasers are a necessity for numerous industrial applications such as marking, coding and soldering,” said David Ahmari, Executive Vice President at EpiWorks. “As part of our on-going efforts to expand our GaAs edge-emitter product line, EpiWorks is pleased to announce a production qualified, leading epitaxial material capability for 808nm lasers. We developed this product during the past year and have achieved excellent device performance and reliability.”
Typical production data from EpiWorks’ AlGaAs/GaAs 808nm industrial laser customers include an output power of 20 Watts, slope efficiency of 1.1 W/A and a threshold current of 7.5 A. These data were taken from a laser bar that employed 46 emitters with an 80 mm stripe width and a 1 mm cavity length. Laser bars utilizing EpiWorks wafers also demonstrate excellent reliability, showing negligible performance degradation after 1200 hours of life testing.
“EpiWorks has been working very closely with our customers to ensure that we are providing the best AlGaAs/GaAs 808nm laser wafers so that our customers achieve leading performance.” said Dr. Nada El-Zein, Director of R&D at EpiWorks. “We believe that our ability to interact at a high-level with our customers will continue to enable further, rapid advancements in our materials technology.”
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EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in high-speed communication devices and systems, including wireless handsets and telecommunications. The company’s products provide enhanced performance, such as greater bandwidth, higher efficiency and better reliability.