CHAMPAIGN-URBANA, ILLINOIS — March 5, 2002 — Illinois-based EpiWorks, Inc., today announced that it is producing state-of-the-art InP/InGaAs p-i-n photodetector epitaxial wafers, up to 4″ in diameter.

The principal benefits of the EpiDetector™ material have been demonstrated with 90 µm mesa diodes employing a 2 µm i-layer. These diodes typically operate with less than 100 pA of leakage current at a 5 Volt reverse bias. This is an order of magnitude improvement over the current industry standard.

“Our customers demand top of the line performance and quality, and we have been working with select customers over the past year to develop state-of-the-art p-i-n technology and also industry leading quality assurance procedures for p-i-n production. We are pleased to announce that we have established a capability to provide leading performance and high-volume production,” said Dr. Dave Ahmari, EVP of Business Development.

“Because the limitations of p-i-n photodetector performance are determined by the epitaxial wafer technology, our customers depend on us to supply advanced materials that provide them distinctive performance capability. Our technology provides two distinct benefits: first, our ultra-pure material allows our customers to achieve very low dark current, and second, our EpiDetector™ process provides excellent resistance characteristics for high-speed applications. Today our customers are employing the EpiDetector™ technology in industry leading p-i-n and TIA components for 2.5, 10, and 40 GB/s applications,” stated Dr. Nada El-Zein, R&D Director.

“Industry-leading performance is only one part of the equation. At EpiWorks we have also developed a unique capability to monitor the quality of our production with full-wafer, quick-lot diode fabrication. This allows us to continually monitor and improve our material quality by directly studying the diode characteristics upon which our customers depend,” commented Dr. Ahmari. “In addition, because we understand that volume manufacturing is a necessity, EpiWorks can produce 2″, 3″, and 4″ diameter EpiDetectors™ with our multi-wafer systems.”

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EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in high-speed communication devices and systems, including wireless handsets and telecommunications. The company’s products provide enhanced performance, such as greater bandwidth, higher efficiency and better reliability.