CHAMPAIGN-URBANA, ILLINOIS — April 23, 2002 — Earlier this month, at the 2002 GaAs Manufacturing Technology Conference held in San Diego, CA, Illinois-based EpiWorks unveiled its latest InP HBT technology. In collaboration with researchers at the University of Illinois, the fastest combined ft and fmax to date for a non-transferred substrate InP-based SHBT was reported. The devices, showing ft of 180 GHz and fmax of 340 GHz, were fabricated on 100 mm InP epi-wafers grown at EpiWorks’ production facility in Champaign, Illinois.

“We are proud to announce that EpiWorks’ carbon-doped HBTs grown by MOCVD now hold the world record for InP SHBT performance. Our proprietary growth process provides not only leading MOCVD capability, but it also shows that MOCVD material can easily meet the performance requirements of OC-768 systems.” stated David Ahmari, EpiWorks’ EVP of Business Development. “EpiWorks was the first to produce 100 mm carbon-doped InP HBTs, and these results demonstrate our continued commitment to maintain our leadership position by pushing to higher-speed and lower-power devices.”

“These results are significant because this growth process is extremely practical and manufacturable. We are able to exceed OC-768 performance requirements without requiring base doping greater than 3 x 1019 cm-3, and that should lead to more reliable devices. In addition, MOCVD based technology is ideal for the integration of p-i-n and TIA components, as well as waveguides and other optical devices.” said Nada El-Zein, EpiWorks R&D Director. “This high performance HBT is complementary to the high-performance PIN and DHBT processes that we recently developed.”

Researchers at the University of Illinois developed their HBT process to study the properties of InP HBTs when scaled to very small dimensions. Devices were fabricated with emitter widths between 1.2 µm and 0.35 µm. An HBT with a 1.2 x 12 µm2 emitter device demonstrated an ft of 178 GHz and an fmax of 244 GHz. A scaled HBT with a 0.35 x 12 µm2 emitter demonstrated the record speed performance.

Professor Milton Feng, who led the project at the University of Illinois, said “Many groups are interested in InP HBTs for low-power, high-speed circuits. We are excited because MOCVD has historically been a lower cost, higher throughput solution for HBT production. This is one major part of the equation in the race against Si and SiGe technology. The other important factor is the ability to scale devices to smaller dimensions. Our work shows that InP HBTs behave according to theory even down to dimensions as small as to 0.35 µm, which demonstrates that InP can continue to out-perform Si and SiGe solutions for high-speed, low-power applications.”

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EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in high-speed communication devices and systems, including wireless handsets and telecommunications. The company’s products provide enhanced performance, such as greater bandwidth, higher efficiency and better reliability.