CHAMPAIGN-URBANA, ILLINOIS – June 4, 2003 – Today, Illinois based EpiWorks, Inc., a leading developer and manufacturer of compound semiconductor epitaxial wafers, announced the successful completion of a collaborative research project to develop carbon-doped GaAsSb. State-of-the-art material quality has been demonstrated in a multi-wafer production reactor.

Using a process developed by EpiWorks, source materials supplied by Epichem, and InP substrates supplied by InPact, the project goal to obtain a carbon-doped GaAsSb majority carrier mobility greater than 40 cm2/V-s for a doping level greater than 7×1019 cm-3 was achieved. Carbon doping levels above 8×1019 cm-3 were also demonstrated.

“With our partners, EpiWorks has developed an industry leading c-doped GaAsSb process. We are very excited about the results and have already begun applying the material in a heterojunction bipolar transistor (HBT). GaAsSb HBTs are an important potential technology for high-speed digital and military applications and could be a breakthrough technology in high-speed wireless applications. By developing the process on full 3″ wafers, we have shown that the uniformity of GaAsSb is comparable to c-doped InGaAs, which is critical for HBTs.” said Quesnell Hartmann, President of EpiWorks, Inc.

Scientific details will be forthcoming in upcoming conferences and publications.

“We are proud to announce the completion of this project, and the successful collaboration between Epichem and EpiWorks,” said Ravi Kanjolia, Chief Technology Officer at Epichem. “Our R&D is committed to exploring novel and innovative uses of our sources, and these results demonstrate that Epichem sources are of the highest quality. We look forward to continuing collaborative efforts in the future.”

The process was developed in a production style metal-organic chemical vapor deposition (MOCVD) system, capable of producing eight 3-inch wafers, or eight 4-inch wafers in a single production run. The single layer non-uniformity was less than 2% across the wafer as measured by the contactless resistivity measurement method.

Didier Marsan, CEO of InPact, commented, “We are pleased to participate in the development of this exciting new technology, and that our substrates have helped demonstrate these excellent results.”

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EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in optical components and high-speed communication systems. The company’s products provide these applications additional performance, such as greater bandwidth, higher power efficiency and better reliability. EpiWorks’ business model includes high-level customer interaction and co-development to rapidly advanced its customers’ technology capability and product performance.