CHAMPAIGN, ILLINOIS – November 16, 2004 – Today, Illinois based EpiWorks, Inc., announced its role in the demonstration of the ‘transistor laser’ developed by researchers at the University of Illinois at Urbana-Champaign (UIUC). EpiWorks developed novel epitaxial wafer processes based on the designs provided by the research groups of Professor Nick Holonyak, Jr. and Professor Milton Feng.

“We have now demonstrated laser action in a light emitting transistor, creating an entirely new device technology for optoelectronics,” said Prof. Feng. “Because it is a three-terminal device, the three-port transistor laser can potentially enable significantly higher-speed operation than two-terminal, diode laser technology. By developing a new MOCVD process over the past year, EpiWorks has been a key contributor in helping implement our ideas.”

The announcement follows the UIUC research team’s publication in the Nov. 15th issue of the journal Applied Physics Letters, documenting three-port transistor laser operation of the new device technology for the first time. The transistor laser is a hybrid of both lasers and high-speed transistors, two technologies that EpiWorks has been perfecting for several years.

“One of the main hurdles was developing a new growth process because no one has ever really tried to grow a device like this” commented Dr. Quesnell Hartmann, EpiWorks’ President. “The breadth of our technology, and experience working with different materials and devices was an important factor in developing the right wafer process. It has been exciting to work on this project because the bright ideas generated by Professors Holonyak and Feng often have significant impact on the compound semiconductor industry, and because EpiWorks’ proprietary processes enabled a new breakthrough. We are proud of the results, and look forward to working with the UIUC team as they push the technology toward commercialization.”

This project is supported by DARPA-Photonic HUNT Center. Partial funding for the device layer growth project was provided to Prof. Feng’s research group by the Vice Chancellor of Research’s Office at the University of Illinois.

EpiWorks, Inc. develops and manufactures compound semiconductor epitaxial wafers for application in optical components, wireless devices and high-speed communication systems. The company’s products provide these applications additional performance, such as greater bandwidth, higher power efficiency and better reliability. EpiWorks’ business model includes high-level customer interaction and co-development to rapidly advanced its customers’ technology capability and product performance. To learn more about EpiWorks visit www.epiworks.com.

The University of Illinois at Urbana-Champaign is well known for its research and development of III-V materials and devices. Professor Nick Holonyak, Jr. invented the first practical light emitting diode, and Professor Feng is credited with demonstrating the fastest bipolar transistor to date.